Transmission electron microscopy investigation of the crystal-amorphous-polycrystal transition in silicon during bismuth room temperature ion implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 132, Issue 3, 1997, Pages 418-424

  Faure J ^a   Angelov, Ch ^b   Kalitzova, M ^b   Simov, S ^b  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Amorphization; Ion implantation; Liquid solid transition; Polycrystallization; Silicon; Transmission electron microscopy

Indexed keywords

AMORPHIZATION; BISMUTH; CHEMICAL MODIFICATION; COMPUTATIONAL METHODS; CRYSTALLIZATION; ION IMPLANTATION; LIQUID METALS; NUCLEATION; POLYCRYSTALLINE MATERIALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

CLUSTERING PHENOMENON;

SEMICONDUCTING SILICON;

EID: 0031271561     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00420-5     Document Type: Article

References (25)

1. L. Csepregi, E.F. Kennedy, J.W. Mayer, T.W. Sigmon, J. Appl. Phys. 49 (1978) 3906.
2. J. Narayan, J. Appl. Phys. 53 (1982) 8607.
3. R. Drosd, J. Washburn, J. Appl. Phys. 53 (1982) 397.
4. P. Blood, W.L. Brown, G.L. Miller, J. Appl. Phys. 50 (1979) 173.
5. J. Narayan, O.W. Holland, Appl. Phys. Lett. 41 (1982) 239.
6. G.L. Olson, Mater. Res. Soc. Symp. Proc. 35 (1985) 25.
7. C.E. Christodoulides, G. Carter, J.S. Williams, Radiat. Eff. 48 (1980) 91.
8. J. Fletcher, J. Narayan, O.W. Holland, Inst. Phys. Conf. Ser. 52 (1985) 271.
9. J.S. Williams, R.G. Elliman, Nucl. Instr. and Meth. 182 (1981) 389.
10. R.G. Elliman, G. Carter. Nucl. Instr. and Meth. 210 (1983) 663.
11. R.G. Elliman, J.M. Poate, J.S. Williams, J.M. Gibson, D.C. Jacobson, D.K. Sood, Mater. Res. Soc. Symp. Proc. 51 (1986) 389.
12. E. Nygren, J.S. Williams, A.P. Pogany, R.G. Elliman, G. L. Olson, J.C. Mc Callum, Mater. Res. Soc. Symp. Proc. 74 (1987) 307.
13. E. Nygren, A.P. Pogany, K.T. Short, J.S. Williams, R.G. Elliman, J.M. Poate, Appl. Phys. Lett. 52 (6) (1988) 439.
14. Y. Ishikawa, I. Kobayashi, I. Nakamichi, Jpn. J. Appl. Phys. 29 (10) (1990) L1929.
15. S.U. Campisano, E. Rimini. P. Baeri, G. Foti, Appl. Phys. Lett. 37 (2) (1980) 170.
16. C.M. Parry, S.P.I.E. 244 (1980) 2.
17. J.F. Ziegler, J.P. Biersack, U. Littmark, The Stopping and Range of Ions in Matter, vol. 1, Pergamon, New York, 1985.
18. F.F. Komarov, A.P. Novikov, Phys. Stat. Sol. A 112 (1989) 273.
19. N. Bonnet, S. Simov, A. Berteloodt, J. Fauré, Proceedings of the 32nd S.F.M.E. Congress, Rouen, France, 1992, p. 13.
20. T. Sands, D.K. Sadana, R. Gronsky, J. Washburn, Appl. Phys. Lett. 44 (1984) 874.
21. G.H. Kinchin, R.S. Pease, J. Nucl. Energy 1 (1955) 200.
22. H.J. Stein, F.L. Vook, D.K. Brice, J.A. Borders, S.T. Picraux, Proceedings of the First International Conference on Ion Implantation, Gordon and Breach, London, 1971, p. 17.
23. J. Narayan, D. Fathy, S.O. Oen, O.W. Holland, J. Vac. Sci. Technol. A 2 (1984) 1303.
24. A. Claveric, C. Vieu, J. Fauré, J. Beauvillain, Mat. Sci. Eng. B 2 (1989) 99.
25. E. Nygren, J.C. Mc Callum, R. Thornton, J.S. Williams, G.S. Olson, Mater. Res. Soc. Symp. Proc. 100 (1988) 405.