Amorphization and crystallization in high-dose Zn+-implanted silicon

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1143-1149

  Kalitzova, M ^a,c   Simov, S ^a,e   Yankov, R A ^a   Angelov, Ch ^b   Vitali, G ^c   Rossi, M ^c   Pizzuto, C ^c   Zollo, G ^c   Faure J ^d   Killian, L ^d   Bonhomme, P ^d   Voelskow, M ^e  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE FOR NUCLEAR RESEARCH AND NUCLEAR ENERGY   (Bulgaria)

^c SAPIENZA UNIVERSITY OF ROME   (Italy)

^d UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^e INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242341293     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363904     Document Type: Article

References (14)

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