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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 6, 2004, Pages 2663-2667

Molecular-beam-epitaxy growth of high-quality InGaAsN/GaAs quantum well lasers emitting at 1.3 μm

(15) Wang, J S a,b Hsiao, R S a,c Lin, G a Lin, K F a Liu, H Y a Lai, C M a Wei, L a Liang, C Y a Chi, J Y a Kovsh, A R a,d Maleev, N A a,d Livshita, D A a,d Chen, J F c Yu, H C a,e Ustinov, V M d

a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

b CHUNG YUAN CHRISTIAN UNIVERSITY (Taiwan)

c NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

d IOFFE INSTITUTE (Russian Federation)

e NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CURRENT DENSITY; GROWTH (MATERIALS); MOLECULAR BEAM EPITAXY; PHASE SEPARATION; QUANTUM EFFICIENCY; QUANTUM WELL LASERS; TEMPERATURE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

BRAGG MIRRORS; SURFACE-EMITTING LASERS; THRESHOLD CURRENT DENSITY; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 19944430176 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1807839 Document Type: Article

Times cited : (11)

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