|
Volumn , Issue , 2002, Pages 557-560
|
Effect of GaNAs stain compensating layer over InAs quantum dots grown by MOMBE
a a a a a a a |
Author keywords
[No Author keywords available]
|
Indexed keywords
MOLECULAR BEAM EPITAXY;
OPTICAL COMMUNICATION;
PHOTOLUMINESCENCE;
SELF ASSEMBLY;
SEMICONDUCTING GALLIUM COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRAIN;
STRAIN-COMPENSATING LAYERS;
SEMICONDUCTOR QUANTUM DOTS;
|
EID: 0036045724
PISSN: 10928669
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (4)
|
References (2)
|