Effects of post-metallization annealing of high-K dielectric thin films grown by MOMBE

Microelectronic Engineering

Volumn 77, Issue 1, 2005, Pages 48-54

  Yun, Minseong ^a   Kim, Myoung Seok ^a   Ko, Young Don ^a   Moon, Tae Hyoung ^a   Hong, Jang Hyuk ^a   Myoung, Jae Min ^a   Yun, Ilgu ^a  

^a Yonsei University   (South Korea)

Author keywords

HfO2; High K dielectric; MOMBE; Post metallization annealing

Indexed keywords

ANNEALING; CAPACITANCE; DIELECTRIC FILMS; ELECTRIC POTENTIAL; FILM GROWTH; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; METALLIZING; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; PERMITTIVITY;

GATE OXIDE; HFO2; HIGH-K DIELECTRICS; POST-METALLIZATION ANNEALING;

THIN FILMS;

EID: 9644259241     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2004.08.009     Document Type: Article

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