Corrosive Behavior of Tungsten in Post Dry-Etch Residue Remover

Industrial and Engineering Chemistry Research

Volumn 42, Issue 24, 2003, Pages 6096-6103

  Chen, Bing Hung ^a   Zhang, Hao ^b,c   Chooi, Simon Y M ^c   Chan, Lap ^c   Xu, Y ^d   Ye, J H ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CLEANING; DRY ETCHING; FAILURE (MECHANICAL); PITTING; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DEIONIZED WATER;

TUNGSTEN;

CHLORINE; ELECTROLYTE; TUNGSTEN; WATER;

CORROSION; ELECTROCHEMICAL ANALYSIS; ETCHING; FAILURE; SURFACE PROPERTY; TUNGSTEN;

CHEMICAL COMPOSITION; CONFERENCE PAPER; CORROSION; DENSITY; ELECTROCHEMISTRY; OXIDATION; SCANNING ELECTRON MICROSCOPY; SURFACE PROPERTY; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0344925544     PISSN: 08885885     EISSN: None     Source Type: Journal    
DOI: 10.1021/ie030025h     Document Type: Conference Paper

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