Monitoring of stress reduction in shallow trench isolation CMOS structures via synchrotron X-ray topography, electrical data and Raman spectroscopy

Journal of Materials Science: Materials in Electronics

Volumn 10, Issue 5, 1999, Pages 351-358

  Mcnally, P J ^a   Curley, J W ^a   Bolt, M ^b   Reader, A ^b   Tuomi, T ^c   Rantamaki R ^c   Danilewsky, A N ^e   Dewolf, I ^d  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b ORANGE LABS   (France)

^c AALTO UNIVERSITY   (Finland)

^d IMEC   (Belgium)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; RAMAN SPECTROSCOPY; STRESS ANALYSIS;

SHALLOW TRENCH ISOLATION; SYNCHROTRON X RAY TOPOGRAPHY (SXRT);

SEMICONDUCTING SILICON;

EID: 0032653686     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1008993322697     Document Type: Article

References (17)

1. S. NAG and A. CHATTERJEE, Solid State Technol. 40 (1997) 129.
2. A. CHATERJEE, I. ALI, K. JOYNER, D. MERCER, J. KUEHNE, M. MASON, A. ESQUIVEL, D. ROGERS, S. O'BRIEN, P. MEI, S. MURTAZA, S. P. KWOK, K. TAYLOR, S. NAG, G. HAMES, M. HANRATTY, H. MARCHMAN, S. ASHBURN and I. C. CHEN, J. Vac. Sci. Technol. B 15 (1997) 1936.
3. J. M. BOYD and J. P. ELLUL, J. Electrochem. Soc. 144 (1997) 1838.
4. P. M. FAHEY, S. R. MADER, S. R. STIFFLER, R. L. MOHER, J. D. MIS and J. A. SLINKMAN, IBM. J. Res. Dev. 36 (1992) 158.
5. T. TUOMI, K. NAUKKARINEN and P. RABE, Phys. Status Solidi A 25 (1974) 93.
6. B. K. TANNER, J. Electrochem. Soc. 136 (1989) 3438.
7. A. ZARKA, Scanning Microscopy Supplement 7 (1993) 221.
8. M. HART, J. Appl. Crystallogr. 8 (1975) 436.
9. D. V. NOVIKOV, M. OHLER, R. KÖHLER and G. MATERLIK, J. Phys. D: Appl. Phys. 28 (1995) A84.
10. D. K. BOWEN and B. K. TANNER, "High Resolution X-Ray Diffractometry and Topography" (Taylor & Francis, 1998).
11. G. H. SCHWÜTTKE, J. Appl. Phys. 36 (1965) 2712.
12. I. A. BLECH and E. S. MEIRAN, ibid. 38 (1967) 2913.
13. A. AUTHIER, in "X-Ray and Neutron Dynamical Diffraction: Theory and Applications", edited by A. Authier, S. Lagomarsino and B. K. Tanner (Plenum, 1996).
14. C. L. HUANG, H. R. SOLEIMANI, G. J. GRULA, J. W. SLEIGHT, A. VILLANI, H. ALI and D. M. ANTONIADIS, IEEE Trans. Electron Devices 44 (1997) 646.
15. J. A. KING, "Materials Handbook for Hybrid Microelectronics", (Artech House, USA, 1988).
16. T. TUOMI, S. HAHN, M. TILLI, C. C. D. WONG and O. BORLAND, Mater Res. Soc. Symp. Proc. 71 (1986) 47.
17. I. DEWOLF, Semicond. Sci. Technol. 11 (1996) 139.