In-situ observation of UV/ozone oxidation of silicon using spectroscopic ellipsometry

Materials Research Society Symposium - Proceedings

Volumn 569, Issue , 1999, Pages 101-106

  Saitoh, T ^a   Kobayashi, D ^a   Kimura, D ^a   Asai, K ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELLIPSOMETRY; FLOW OF FLUIDS; GROWTH (MATERIALS); OXIDATION; OZONE; PHOTOCHEMICAL REACTIONS; PRESSURE; SURFACES; TEMPERATURE; ULTRAVIOLET RADIATION;

GAS PRESSURE; IN SITU SPECTROSCOPIC ELLIPSOMETRY; INITIAL OXIDATION PROCESS; MULTIWAVELENGTH; OXYGEN GAS FLOW RATE; WAFER TEMPERATURE;

SILICA;

EID: 0033323831     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. R. M. A. Azzam and N. M. Bashara, "Ellipsometiy and Polarized Light", North Holland Pub. Co., (1977)
2. J. B. Theeton, F. Hottier and J. Hallais, J. Crystal Growth 46, 245 (1979)
3. D. E. Aspnes, Thin Solid Films 233, 1 (1993)
4. R. W. Collins, Rev. Sci. Instrum. 61, 2029 (1990)
5. J. -T. Zettler, T. Wethkamp, M. Zorn, M. Pristovsek, C. Meyne, K. Ploska and W. Richter, Appl. Phys. Lett 67 3783 (1995)
6. S. C. Chao, R. Pitchai and Y. H. Lee, J. Electrochem. Soc. 136, 2751 (1989)
7. A. Kazor, R. Gwillian and I. W. Boyd: Appl. Phys. Lett 65, 412 (1994)
8. N. Awaji, S. Okubo, T. Nakanishi, Y. Sugita, K. Takasaki and S. Komiya:Japan. J. Appl. Phys. 35, L67 (1996)
9. B. Johs, D. Doerr, S. Pittal, I. B. Bhat and S. Dakshinamurthy: Thin Solid Films 233, 293 (1993)
10. G. E. Jellison, Jr. and F. A. Modine: J. Appl. Phys. 76 (6) 3758 (1994)
11. M. Niwano, J. Kageyama, K. Kinashi and N. Miyamoto: J. Vac. Sci. Technol. A12 (2) 465 (1994)
12. N. Cabrera and N. F. Mott: Rep. Progr. Phys. 12, 163 (1948)