A low-power Ka-band voltage-controlled oscillator implemented in 200-GHz SiGe HBT technology

IEEE Transactions on Microwave Theory and Techniques

Volumn 53, Issue 5, 2005, Pages 1672-1679

  Chen, Yi Jan Emery ^a   Kuo, Wei Min Lance ^b   Jin, Zhenrong ^b,c   Lee, Jongsoo ^b,d   Tretiakov, Youri V ^e,f   Cressler, John D ^b   Laskar, Joy ^b   Freeman, Greg ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c IBM MICROELECTRONICS   (United States)

^d RF Micro Devices   (United States)

^e JEM Microelectronics   (United States)

^f RF MICRO DEVICES   (United States)

Author keywords

1 f noise; Heterojunction bipolar transistor (HBT); Ka band; Line inductor; Low power; Microstrip line; Phase noise; Silicon germanium (SiGe); Voltage controlled oscillator (VCO)

Indexed keywords

ELECTRIC INDUCTORS; FREQUENCIES; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROSTRIP LINES; RESONATORS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; VOLTAGE CONTROL;

1/F NOISE; K Α-BAND; LINE INDUCTORS; LOW POWER; PHASE NOISE; SILICON-GERMANIUM (SIGE);

VARIABLE FREQUENCY OSCILLATORS;

EID: 19544380422     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2005.847063     Document Type: Article

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