40 GHz fully integrated and differential monolithic VCO with wide tuning range in AIInAs/InGaAs HBT

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 129-132

  Kurdoghlian, A ^a   Mokhtari, M ^a   Fields, C H ^a   Wetzel, M ^a   Sokolich, M ^a   Micovic, M ^a   Thomas III, S ^a   Shi, B ^a   Sawins, M ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; OPTICAL COMMUNICATION; PHOTOLITHOGRAPHY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; WAVEGUIDES;

PHASE NOISE;

VARIABLE FREQUENCY OSCILLATORS;

EID: 0035165971     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Large signal analysis and experimental characteristics of monolithic InP-based W-band HEMT oscillators
2. Monolithic W-band VCO's using pseudomorphic AlGaAs/InGaAs/GaAs HEMT's
3. A V-band AlGaAs/InGaAs hetrojunction FET MMIC dielectric resonator oscillator
4. 35-40 GHz monolithic VCO's utilizing high speed GaInP/GaAs HBT's
5. Ultra-high fmax and ft InP/InGaAs double-hetrojunction bipolar transistors with step-graded InGaAsP collector
6. InP based HBT millimeter-wave technology and circuit performance to 40GHz
7. Reliability of InP-based HBT IC technology for high speed low-power applications
8. A low power 72.8 GHz static frequency divider implemented in AIInAs/InGaAs HBT IC technology
9. Dry etching of polyimide vias using an inductively coupled plasma source: Model and experiment