Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

Journal of Computational Electronics

Volumn 2, Issue 2-4, 2003, Pages 109-112

  Nakatsuji, Hiroshi ^a   Kamakura, Yoshinari ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

hole mobility; inversion layer; pseudopotential; strained Si

Indexed keywords

INVERSION LAYERS; MONTE CARLO METHODS; MOSFET DEVICES;

FULL-BAND MONTE CARLO; HIGH FIELD TRANSPORT; LOW FIELD MOBILITY; NONLOCAL PSEUDOPOTENTIALS; PSEUDOPOTENTIALS; SATURATION VELOCITY; STRAINED-SI; TWO-DIMENSIONAL HOLE GAS;

HOLE MOBILITY;

EID: 1942515219     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/B:JCEL.0000011408.62072.51     Document Type: Article

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