Probing electrical transport across oxide interfaces by noncontact atomic force microscopy

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4968-4970

  Shao, Rui ^a   Bonnell, Dawn A ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALS; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTROSTATICS; GRAIN BOUNDARIES; NIOBIUM; POTENTIOMETERS (ELECTRIC MEASURING INSTRUMENTS); STRONTIUM COMPOUNDS; SURFACE TOPOGRAPHY; SURFACE TREATMENT; VOLTAGE CONTROL;

ELECTROSTATIC INTERACTIONS; FOUR-POINT MEASUREMENT; SURFACE POTENTIAL; SURFACE POTENTIOMETRY;

TRANSPORT PROPERTIES;

EID: 19344368680     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1825634     Document Type: Article

References (22)

1. Electronic Ceramics: Properties, Devices and Applications, edited by, L. M. Levinson, (Marcel Dekker, New York, 1988).
2. B. D. Huey and D. A. Bonnell, Solid State Ionics 131, 51 (2000).
3. E. B. McDaniel, S. C. Gausepohl, C.-T. Li, M. Lee, J. W. P. Hsu, R. A. Rao, and C. B. Eom, Appl. Phys. Lett. 70, 1882 (1997).
4. S. V. Kalinin and D. A. Bonnell, Appl. Phys. Lett. 78, 1306 (2001).
5. S. V. Kalinin, M. R. Suchomel, P. K. Davies, and D. A. Bonnell, J. Am. Ceram. Soc. 85, 3011 (2002).
6. N. Nakagiri, H. Sugimura, Y. Ishida, K. Hayashi, and O. Takai, Surf. Sci. 532-535, 999 (2003).
7. S. V. Kalinin and D. A. Bonnell, Nano Lett. 4, 555 (2004).
8. T. R. Albrecht, P. Grütter, D. Horne, and D. Rugar, J. Appl. Phys. 69, 668 (1991).
9. A. Kikukawa, S. Hosaka, and R. Imura, Appl. Phys. Lett. 66, 3510 (1995).
10. A. Kikukawa, S. Hosaka, and R. Imura, Rev. Sci. Instrum. 67, 1463 (1996).
11. S. Kitamura and M. Iwatsuki, Appl. Phys. Lett. 72, 3154 (1998).
12. Scanning Probe Microscopy and Spectroscopy: Theory, Techniques and Applications, edited by, D. A. Bonnell, (Wiley VCH, New York, 2000), p. 205.
13. Noncontact Atomic Force Microscopy, edited by S. Morita, R. Wiesendanger, and E. Meyer (Springer, Berlin, 2002).
14. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
15. R. Shao and D. A. Bonnell (unpublished).
16. T. Y. Tien and W. G. Carlson, J. Am. Ceram. Soc. 46, 297 (1963).
17. A. Rothschild, Y. Komem, A. Levakov, N. Ashkenasy, and Y. Shapira, Appl. Phys. Lett. 82, 574 (2003).
18. M. H. Sukkar and H. L. Tuller, in Non-stoichiometric Compounds: Surfaces, Grain Boundaries, and Structural Defects, edited by, J. Nowtny, and, W. Wepper, (Kluwer, Dordrecht, 1989), p. 237.
19. P. R. Bueno, E. R. Leite, M. M. Oliveira, M. O. Orlandi, and E. Longo, Appl. Phys. Lett. 79, 48 (2001).
20. A. Efimov and S. R. Cohen, J. Vac. Sci. Technol. A 18, 1051 (2000).
21. S. Sadewasser, P. Carl, T. Glatzel, and M. Ch. Lux-Steiner, Nanotechnology 15, S14 (2004).
22. L. Olsson, N. Lin, V. Yakimov, and R. Erlandsson, J. Appl. Phys. 84, 4060 (1998).