Investigation of dopant effects in CoSi2 and NiSi fully silicided metal gates

Electrochemical and Solid-State Letters

Volumn 8, Issue 5, 2005, Pages

  Wen, H C ^a   Liu, J ^a   Sim, J H ^a   Lu, J P ^b   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DOPING (ADDITIVES); HIGH TEMPERATURE OPERATIONS; LOGIC GATES; MOS DEVICES; SECONDARY ION MASS SPECTROMETRY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION;

CAPPING; DOPANTS; METAL GATES; SILICIDATION;

COBALT COMPOUNDS;

EID: 18944395575     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1883868     Document Type: Article

References (15)

1. M. Qin, V. M. C. Poon, and S. C. H. Ho, J. Electrochem. Soc., 147, 148 (2001).
2. B. Tavel, T. Skotnicki, G. Pares, N. Carrière, M. Rivoire, F. Leverd, C. Julien, J. Torres, and R. Panlel, Tech. Dig. - Int. Electron Devices Meet., 2001, 37.5.1.
3. W. P. Maszara, Z. Krivokapic, P. King, J.-S. Goollgweon, and M.-R. Lin, Tech. Dig. - Int. Electron Devices Meet., 2002, 367.
4. D. S. Yu, Albert Chin, C. H. Lai, W. J. Chen, C. X. Zhu, M.-F. Li, S. Y. Zhu, and D. L. Kwong, in VLSI Technology Digest, IEEE, p. 1020 (2004).
5. H. C. Wen, J. H. Sim, J. P. Lu, and D. L. Kwong, Electrochem. Solid-State Lett., 7, G258 (2004).
6. P. Xuan and J. Bokor, IEEE Electron Device Lett., 24, 634 (2003).
7. J. Kedzierski, D. Boyd, P. Ronsheim, S. Zafar, J. Newbury, J. Ott, C. Cabrai Jr., M. Ieong, and W. Haensch, Tech. Dig, - Int. Electron Devices Meet., 2003, 13.3.1.
8. C. Cabrai, J. Kedzierski, B. Linder, S. Zafar, V. Narayanan, S. Fang, A. Steegen, P. Kozlowski, R. Carruthers, and R. Jammy, in VLSI Technology Digest, IEEE, p. 72 (2004).
9. Z. Krivokapic, V. Moroz, W. Maszara, and M.-R. Lin, Tech. Dig. - Int. Electron Devices Meet., 2003, 18.5.1.
10. B. Muller, M. Froment, H. Brut, R. Pantel, V. Carron, H. Achard, A. Halimaoui, F. Boeuf, F. Wacquant, C. Regnier, D. Ceccarelli, R. Palla, A. Beverina, V. DeJonghe, P. Spinelli, O. Leborgne, K. Bard, S. Lis, V. Tirard, P. Morin, F. Trentesaux, V. Gravey, T. Mandrekar, D. Rabilloud, S. Van, E. Olson, and J. Diedrick, in Proceedings of ESSDERC'03, p. 215 (2003).
11. C. Y. Lin, D. S. Yu, A. Chin, C. Zhu, M. F. Li, and D. L. Kwong, IEEE Electron Device Lett. 24, 348 (2003).
12. J. H. Sim, H. C. Wen, J. P. Lu, and D. L. Kwong, IEEE Electron Device Lett., 25, 610 (2004).
13. W. Hume-Rothery, Acta Metall. 14, 17(1966).
14. F. Deng, R. A. Johnson, P. M. Asbeck, S. S. Lau, W. B. Dubbelday, T. Hsiao, and J. Woo, J. Appl. Phys., 81, 8047 (1997).
15. C. Zaring, H. Jiang, B. G. Svensson, and M. Ostling, Appl. Surf. Sci., 53, 147 (1991).