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Long-wavelength vertical-cavity lasers and amplifiers
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a review of long-wavelength VCSELs up to the introduction of InGaAsN is given in: A. Karim, S. Björlin; J. Piprek and J.E. Bowers, "Long-wavelength vertical-cavity lasers and amplifiers", IEEE Selected Topics in Quantum Electronics, 6, pp. 1244-1253, (2000).
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Wafer bonded 1.55μm vertical-cavity lasers with continuous operation up to 105°C
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A. Karim, P. Abraham, D. Lofgreen, Y. J. Chiu, J. Piprek, J. Bowers, "Wafer bonded 1.55μm vertical-cavity lasers with continuous operation up to 105°C", Appl.Phys.Lett, 78, pp. 2632-2633 (2001).
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Continuous-wave operation of single-transverse-mode 1310nm VCSELs up to 115°C
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V. Jayaraman, T.J. Goodnough, T.L. Beam, F.M. Ahedo, R.A. Maurice, "Continuous-Wave Operation of Single-Transverse-Mode 1310nm VCSELs up to 115°C", IEEE Photonics Technology Letters, 12, pp. 1595-1597, (2000).
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High-temperature continous-wave operation of 1.3-1.55μm VCSELs with InP/air-gap DBRs
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paper ThA6, Oct.
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C.-K. Lin et al., "High-temperature continous-wave operation of 1.3-1.55μm VCSELs with InP/air-gap DBRs", IEEE 18th Int. Semiconductor Laser Conf., Garmisch, paper ThA6, Oct. 2002.
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M. Ortsiefer, R. Shau, G. Böhm, F. Köhler, J. Rosskopf, G. Steinle, B. Borchert, M.-C. Amann, "High-Temperature 2.5Gb/s Vertical-Cavity Surface-Emitting Lasers at 1.55μm Wavelength", 27th European Conference on Optical Communication (ECOC 2001), Oct. 2001
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Ortsiefer, M.1
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1.2μm continuous-wave operation of highly strained GaInAs quantum well lasers on GaAs substrates
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S. Sato, S. Satoh, "1.2μm continuous-wave operation of highly strained GaInAs quantum well lasers on GaAs Substrates", Jpn.J.Appl.Phys. L-990-L992, (1999).
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IPRM; Stockholm, post-deadline contribution
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InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm
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J. A. Lott, N.N. Ledentsov, V.M. Ustinov, N.A. Maleev, A.E. Zhukov, A.R. Kovsh, M.V. Maximov, B.V. Volovik, Zh.I. Alferov, D. Bimberg, "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3μm", Electronics Letters 36, pp. 1384-1385, (2000).
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Bimberg, D.10
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11
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Continuous wave 1.3μm InAs-InGaAs quantum dot VCSELs on GaAs substrates
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paper CTuH5
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J.A. Lott, N.N. Ledentsov, V.M. Ustinov, Zh.I. Alferov, D. Bimberg, "Continuous wave 1.3μm InAs-InGaAs quantum dot VCSELs on GaAs substrates", CLEO 2001 Technical Digest, paper CTuH5, p. 137 (2001).
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CLEO 2001 Technical Digest
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Lott, J.A.1
Ledentsov, N.N.2
Ustinov, V.M.3
Alferov, Zh.I.4
Bimberg, D.5
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0035953564
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Continuous wave operation of 1.30μm GaAsSb/GaAs VCSELs
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T. Anan, M. Yamada, K. Nishi, K. Kurihara, K. Tokutome, A. Kamei, S. Sugou, "Continuous wave operation of 1.30μm GaAsSb/GaAs VCSELs", Electronics Letters 37, pp. 566-567, (2001).
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Electronics Letters
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14
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GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance
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M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, Y. Yazawa, "GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance", Jpn. J. of Appl. Phys., 35, pp. 1273-1275, (1996)
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GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
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M.C. Larson, M. Kondow, T. Kitatani, K. Nakahara, K. Tamura, H. Inoue and K. Uomi, "GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes", IEEE Photonics Techn. Lett. 10, pp. 188-190, (1998).
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Uomi, K.7
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16
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6744245576
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Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3μm
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K.D. Choquette, J.F. Klem, A.J. Fischer, O. Blum, A.A. Allerman, I.J. Fritz, S.R. Kurtz, W.G. Breiland, R. Sieg, K.M. Geib, J.W. Scott, R.L. Naone, "Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3μm", Electronics Letters 36, pp. 1388-1390, (2000).
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Choquette, K.D.1
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Geib, K.M.10
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Naone, R.L.12
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Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and cw output power exceeding 500 μW at room temperature
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G. Steinle, A.Y. Egorov, H. Riechert, "Monolithic VCSEL with InGaAsN active region emitting at 1.28μm and cw output power exceeding 500 μW at room temperature", Electronics Letters, 37, pp. 93-95, (2001).
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Electronics Letters
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Steinle, G.1
Egorov, A.Y.2
Riechert, H.3
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Continuous wave operation of 1.26μm GaInNAs/GaAs vertical cavity surface emitting lasers grown by metalorganic chemical vapor deposition
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S. Sato, N. Nishiyama, T. Miyamoto, T. Takahashi, N. Jikutani, M. Arai, A. Matsutani, F. Koyama and N. Iga, "Continuous wave operation of 1.26μm GaInNAs/GaAs vertical cavity surface emitting lasers grown by metalorganic chemical vapor deposition", Electronics Letters 36, pp. 2018-2019, (2000).
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Sato, S.1
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Matsutani, A.7
Koyama, F.8
Iga, N.9
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19
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Low threshold 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by metalorganic chemical vapor deposition
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T. Takeuchi, Y.-L. Chang, M. Leary, A. Tandon, H.-C. Luan, D. Bour, S. Corzine, R. Twist and M. Tan, "Low threshold 1.3 μm InGaAsN vertical cavity surface emitting lasers grown by metalorganic chemical vapor deposition", LEOS 2001, late news proc. PD 1.2, (2001).
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Luan, H.-C.5
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Twist, R.8
Tan, M.9
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20
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0037187736
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Electrically pumped 10 Gbit/s MOVPE grown monolithical 1.3 μm VCSEL with GaInNAs active region
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A. Ramakrishnan, G. Steinle, D. Supper, C. Degen and G. Ebbinghaus, "Electrically pumped 10 Gbit/s MOVPE grown monolithical 1.3 μm VCSEL with GaInNAs active region", Electronics Letters 38, p. 322, (2002)
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Design and analysis of double-fused 1.55-μm vertical-cavity lasers
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D.I. Babic, J. Piprek, K. Streubel, R.P. Mirin, N.M. Margalit, D.E. Mars, J.E. Bowers and E. Hu, "Design and analysis of double-fused 1.55-μm vertical-cavity lasers", IEEE J. of Quantum Electronics, 33, pp. 1369-1383, (1997).
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Data transmission up to 10GBit/s with 1.3μm wavelength InGaAsN VCSELs
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G. Steinle, F. Mederer, M. Kicherer, R. Michalzik, G. Kristen, A. Y. Egorow, H. Riechert, H.D. Wolf, K.J. Ebeling, "Data Transmission up to 10GBit/s with 1.3μm wavelength InGaAsN VCSELs", Electronics Letters 37, pp. 632-634, (2001).
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Electronics Letters
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OC-48 capable InGaAsN vertical cavity lasers
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A.W. Jackson, R. L. Naone, M.J. Dalberth, J.M. Smith, K. J. Malone, D.W. Kisker, J.F. Klem, K.D. Choquette, D.K. Serkland and K.M. Geib, "OC-48 capable InGaAsN vertical cavity lasers", Electronics Letters 37, pp. 355-356, (2001).
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24
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Monolithic GaAs-based 1.3μm VCSEL directly-modulated at 10Gb/s
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post deadline paper CPD 13-1
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R.L. Naone, A.W. Jackson, S.A. Feld, D. Galt, K.J. Malone, J.J. Hindi, "Monolithic GaAs-based 1.3μm VCSEL directly-modulated at 10Gb/s". CLEO 2001 post deadline paper CPD 13-1 (2001)
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