Improved thermal stability of Ni silicide on Si (100) through reactive deposition of Ni

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 1 SPEC., 2003, Pages 319-322

  Kim, Gi Bum ^a   Yoo, Do Joon ^a   Baik, Hong Koo ^a   Myoung, Jae Min ^a   Lee, Sung Man ^b   Oh, Sang Ho ^c   Park, Chan Gyung ^c  

^a Yonsei University   (South Korea)

^b Kangwon National University   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CLEANING; DEPOSITION; ENERGY DISPERSIVE SPECTROSCOPY; SUBSTRATES; TEMPERATURE; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

NICKEL SILICIDE; REACTIVE DEPOSITION; SHEET RESISTANCE;

SEMICONDUCTING SILICON;

EID: 0037207714     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1539064     Document Type: Article

References (18)

1. S. P. Murarka, J. Vac. Sci. Technol. B 4, 1325 (1986).
2. C. M. Osburn, Q. F. Wang, M. Kellam, C. Canovai, P. L. Smith, G. E. McGuire, Z. G. Xiao, and G. A. Rozgonyi, Appl. Surf. Sci. 53, 291 (1991).
3. K. Maex, Mater. Sci. Eng., R. 11, 53 (1993).
4. J. B. Lasky, J. S. Nakos, O. J. Cain, and P. J. Geiss, IEEE Trans. Electron Devices ED-38, 262 (1991).
5. H. Jeon, C. A. Sukow, J. W. Honeycutt, G. A. Rozgonyi, and R. J. Nemanich, J. Appl. Phys. 71, 4269 (1992).
6. T. Morimoto et al., IEEE Trans. Electron Devices ED-42, 915 (1995).
7. P. X. Xu, S. R. Das, J. P. McCaffrey, C. J. Peters, and L. E. Erickson, Mater. Res. Soc. Symp. Proc. 402, 59 (1995).
8. K. Maex and M. Van Rossum, Properties of Metal Silicides (INSPEC, London, 1995).
9. R. T. Tung and J. M. Gibson, J. Vac. Sci. Technol. A 4, 987 (1985).
10. F. Deng, R. A. Johnson, P. M. Asbeck, S. S. Lau, W. B. Dubbelday, T. Hsiao, and J. Woo, J. Appl. Phys. 81, 8047 (1997).
11. D.-X. Xu, S. R. Das, C. J. Peters, and L. E. Erickson, Thin Solid Film 326, 143 (1998).
12. D. Mangelinck, J. Y. Dai, J. S. Pan, and S. K. Lahiri, J. Appl. Phys. 72 1736 (1999).
13. D. Mangelinck, P. Gas, J. M. Gay, B. Pichaud, and O. Thomas, J. Appl. Phys. 84, 2583 (1998).
14. L. W. Cheng, S. L. Cheng, L. J. Chen, H. C. Chien, H. L. Lee, and F. M. Pan, J. Vac. Sci. Technol. A 18, 1176 (2000).
15. J.-S. Maa, Y. Ono, D. J. Tweet, F. Zhang, and S. T. Hsu, J. Vac. Sci. Technol. A 19, 1595 (2001).
16. M.-A. Nicolet and S. S. Lau, in VLSI Electronics Microscience, Materials and Process Characterization, edited by N. G. Einspruch and G. B. Larrbee (Academic, New York, 1983), Vol. 6, p. 346.
17. L. J. Chen, Mater. Sci. Eng., R 29, 115 (2000).
18. A. Vantomme, S. Degroote, J. Dekoster, G. Langouche, and R. Pretorius, Appl. Phys. Lett. 74, 3137 (1999).