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Thin Solid Films

Volumn 385, Issue 1-2, 2001, Pages 74-80

Transmission electron microscopy study of Ni suicides formed during metal-induced silicon growth

(4) Guliants, E A a Anderson, W A a Guo, L P b Guliants, V V c

a the State University of New York (United States)

b UNIVERSITY AT BUFFALO (United States)

c University of Cincinnati (United States)

Author keywords

Metal induced; Ni suicides; Transmission electron microscopy

Indexed keywords

CRYSTAL STRUCTURE; DEPOSITION; EPITAXIAL GROWTH; FILM GROWTH; NICKEL; NUCLEATION; PRECIPITATION (CHEMICAL); SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

DIFFRACTION PATTERNS; METAL INDUCED GROWTH; NICKEL SILICIDES; POLYCRYSTALLINE THIN FILMS;

POLYCRYSTALLINE MATERIALS;

EID: 0035311834 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(00)01916-7 Document Type: Article

Times cited : (21)

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