Numerical study of data retention due to direct tunneling for nonvolatile memory cell

IEEE Transactions on Electron Devices

Volumn 52, Issue 5, 2005, Pages 955-961

  Watanabe, Hiroshi ^a   Ishihara, Takamitsu ^a   Matsunaga, Yasuhiko ^a   Matsuzawa, Kazuya ^a   Matsushita, Daisuke ^a   Muraoka, Kouichi ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Computer aided analysis; Device simulations; Direct tunneling; Nonvolatile memory; Transient analysis

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; GRAIN BOUNDARIES; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

DEVICE SIMULATIONS; DIRECT TUNNELING; NONVOLATILE MEMORY; TRANSIENT ANALYSIS;

NONVOLATILE STORAGE;

EID: 18844395389     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.846312     Document Type: Article

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