Surfaces of undoped and boron doped polycrystalline diamond films influenced by negative DC bias voltage

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1636-1639

  Xia, Yiben ^a,b   Sekiguchi, Takashi ^b   Zhang, Wenjun ^c   Jiang, Xin ^c   Ju, Jianhua ^a   Wang, Linjun ^a   Yao, Takafumi ^b  

^a SHANGHAI UNIVERSITY   (China)

^b TOHOKU UNIVERSITY   (Japan)

^c FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL ORIENTATION; GRAIN SIZE AND SHAPE; HYDROGEN; ION BOMBARDMENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; SURFACES;

BORON DOPED POLYCRYSTALLINE DIAMOND FILMS; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION;

DIAMOND FILMS;

EID: 0034275355     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00318-6     Document Type: Article

References (8)

1. J.W. Davis A.A. Haasz P.C. Stangeby J. Nucl. Mater. 145 1987 417
2. W.J. Zhang X. Jiang Y.B. Xia J. Appl. Phys. 82 1997 1896
3. L.H. Robins L.P. Cook E.N. Farabaugh A. Feldman Phys. Rev. B 39 1989 13367
4. Y. Yokota H. Kawarada A. Hiraki Material Research Society Symposium Proceedings, Pittsburgh, PA 1990 162
5. A.T. Collins M. Kamo Y. Sato J. Mater. Res. 5 11 1990 2507
6. K. Hayashi S. Yamanaka H. Watanabe T. Sekiguchi H. Okushi K. Kajimura J. Cryst. Growth 81 1997 744
7. K. Hayashi S. Yamanaka H. Watanabe T. Sekiguchi H. Okushi K. Kajimura J. Cryst. Growth 183 1998 338
8. J. Won A. Hatta H. Yagyu Recent Prog. Diamond Electron. 1 1996 103