The selective etching with H+ ions and its effect on the oriented growth of diamond films

Journal of Applied Physics

Volumn 82, Issue 4, 1997, Pages 1896-1899

  Zhang, W J ^a,b   Jiang, X ^a   Xia, Y B ^a,c  

^a FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

^b LANZHOU UNIVERSITY   (China)

^c SHANGHAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001382966     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365995     Document Type: Article

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