A physical model for silicon anisotropic chemical etching

Semiconductor Science and Technology

Volumn 20, Issue 6, 2005, Pages 524-531

  Jiang, Yanfeng ^a   Huang, Qing An ^b  

^a NORTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

^b SOUTHEAST UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; COMPUTER SIMULATION; HYDROGENATION; MICROELECTROMECHANICAL DEVICES; MONTE CARLO METHODS; NONLINEAR EQUATIONS; SEMICONDUCTING SILICON; SILICON SENSORS;

ANISOTROPIC ETCHING; ELECTROCHEMICAL ROUTES; TRANSFER PROBABILITY; WET CHEMICAL ETCHING;

ETCHING;

EID: 18744400797     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/6/008     Document Type: Article

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