Correlation of low-frequency noise and emitter-base reverse-bias stress in epitaxial Si- and SiGe-base bipolar transistors

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 357-360

  Babcock, Jeffrey A ^a   Cressler, John D ^a   Vempati, Lakshmi S ^a   Joseph, Alvin J ^a   Harame, David L ^a  

^a AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEGRADATION; ELECTRIC CONTACTS; ELECTRIC FIELD EFFECTS; RELIABILITY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPECTRUM ANALYZERS; SPURIOUS SIGNAL NOISE;

CURRENT GAIN DEGRADATION; DOPING PROFILE; EMITTER BASE REVERSE BIAS STRESS; LOW FREQUENCY NOISE; PARAMETER TO AREA ANALYSIS; POST STRESS NOISE DEGRADATION; RANDOM TELEGRAPH SIGNAL; RELIABILITY TESTING;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029546463     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)