Evolution of deep levels and internal photoemission with annealing temperature at ZnSe/GaAs interfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2961-2966

  Yang, X ^a  

^a XEROX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0004363852     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588943     Document Type: Article

References (20)

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