Diameter of As clusters in LT-GaAs by Raman spectroscopy

Journal of Applied Physics

Volumn 85, Issue 5, 1999, Pages 2929-2933

  Toufella, M ^a   Puech, P ^a   Carles, R ^a   Bedel, E ^b   Fontaine, C ^b   Claverie, A ^c   Benassayag, G ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b LAAS CNRS   (France)

^c CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; ARSENIC; CRYSTALLINE MATERIALS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; PHONONS; RAMAN SPECTROSCOPY; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

PHYSICO-CHEMICAL CHARACTERISTICS; STRAIN EFFECT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0033095256     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369058     Document Type: Article

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