Impurity distribution in ZnSe p-n junctions prepared by Ga diffusion in p-type ZnSe

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 747-750

  Sakurai, Fumitoshi ^a   Suto, Ken ^a   Nishizawa, Junichi ^b   Oyama, Yutaka ^b   Motozawa, Mitsutake ^c   Hara, Yoshinori ^c  

^a Telecommunications Advancement Organization of Japan   (Japan)

^b SEMICONDUCTOR RESEARCH INSTITUTE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; DIFFUSION IN SOLIDS; EPITAXIAL GROWTH; LUMINESCENCE OF INORGANIC SOLIDS; SECONDARY ION MASS SPECTROMETRY; SELENIUM; SEMICONDUCTING GALLIUM; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS; VAPOR PRESSURE; VOLTAGE MEASUREMENT;

BLUE LUMINESCENCE; EPITAXIAL LAYER; ZINC SELENIDE;

CRYSTAL IMPURITIES;

EID: 0034140358     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393264     Document Type: Article

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