Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD

Vacuum

Volumn 51, Issue 4, 1998, Pages 537-541

  Sasaki, K ^a   Tomoda, H ^a   Takada, T ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; ELECTRON CYCLOTRON RESONANCE; EPITAXIAL GROWTH; HYDROGEN; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMA ETCHING; SEMICONDUCTING SILICON; THERMAL EFFECTS;

LOW TEMPERATURE EPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0032316376     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0042-207x(98)00250-4     Document Type: Article

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