Influence of dislocation density on photoluminescence intensity of GaN

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 406-410

  Falth J F ^a   Gurusinghe, M N ^a   Liu, X Y ^a   Andersson, T G ^a   Ivanov, I G ^b   Monemar, B ^b   Yao, H H ^c   Wang, S C ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

A1. Atomic force microscopy; A1. Capacitance voltage measurement; A1. Defects; A1. Photoluminescence; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; VOLTAGE MEASUREMENT; X RAY DIFFRACTION;

BANDGAP; CAPACITANCE-VOLTAGE MEASUREMENT; DISLOCATION DENSITY; PHOTOLUMINESCENCE INTENSITY;

GALLIUM NITRIDE;

EID: 18444415790     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.010     Document Type: Conference Paper

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