Optical response at 1.3 μm and 1.5 μm with InAs quantum dots embedded in a pure GaAs matrix

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 181-185

  Da Silva, M J ^a   Quivy, A A ^a   Martini, S ^a   Lamas, T E ^a   Da Silva, E C F ^a   Leite, J R ^a  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL RESPONSE;

SEMICONDUCTOR GROWTH;

EID: 0037380152     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02405-3     Document Type: Conference Paper

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