Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 463-467

  Lee, W S ^a   Jeong, J Y ^a   Kim, H B ^b   Chae, K H ^b   Whang, C N ^b   Im, S ^b   Song, J H ^c  

^a Yonsei University   (South Korea)

^b Atom scale Surf Sci Res Ctr Y   (South Korea)

^c Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTROOPTICAL EFFECTS; ION IMPLANTATION; LEAKAGE CURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

SHARP VIOLET PHOTOLUMINESCENCE;

SEMICONDUCTING FILMS;

EID: 0035127366     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00704-2     Document Type: Article

References (11)

1. Canham L.T. Appl. Phys. Lett. 57:1990;1046.
2. Kim H.B., Chae K.H., Whang C.N., Jeong J.Y., Oh M.S., Im S., Song J.H. J. Lumin. 80:1999;281.
3. Jeong J.Y., Im S., Oh M.S., Kim H.B., Chae K.H., Whang C.N., Song J.H. J. Lumin. 80:1999;285.
4. Zhang S., Zhang W., Yuan J. Thin Soild Films. 326:1998;92.
5. Yoshida T., Yamada Y., Orii T. J. Appl. Phys. 83:1998;5427.
6. Zhang J.Y., Bao X.M., Ye Y.H., Tan X.L. Appl. Phys. Lett. 73:1998;1790.
7. Rebohle L., von Borany J., Yankov R.A., Skorupa W., Tyschenko I.E., Fröb H., Leo K. Appl. Phys. Lett. 71:1997;2809.
8. Fujimaki M., Ohki Y., Nishikawa H. J. Appl. Phys. 81:1997;745.
9. Song H.Z., Bao X.M., Li N.S., Zhang J.Y. J. Appl. Phys. 82:1997;4028.
10. Qin G.G., Bai G.F., Li A.P., Ma S.Y., Sun Y.K., Zhang B.R., Ma Z.C., Zong W.H. Thin Solid Films. 338:1999;131.
11. Dimaria D.J., Kirtley J.R., Pakulis E.J., Dong D.W., Kuan T.S., Pesavento F.L., Theis T.N., Cutro J.A. J. Appl. Phys. 56:1984;401.