The modulation of electrical carrier transport in metal-MPCVD diamond due to the microcrystalline inhomogeneous barriers

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 584-588

  Madaleno, J C ^a   Pereira, L ^a  

^a UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Electrical properties; Grain boundary; MPCVD diamond; Schottky diodes; SCLC

Indexed keywords

ACTIVATION ENERGY; ELECTRIC PROPERTIES; ELECTRIC SPACE CHARGE; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; FREQUENCY MODULATION; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES;

ELECTRICAL TRANSPORT MODEL; HOPPING EFFECTS; MPCVD DIAMOND; SPACE CHARGE LIMITED CONDUCTION (SCLC);

DIAMOND FILMS;

EID: 18444381166     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.12.003     Document Type: Conference Paper

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