X-ray studies of Si/Ge/Si(001) epitaxial growth with Te as a surfactant

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 3, 2003, Pages

  Tinkham, B P ^a   Goodner, D M ^a   Walko, D A ^a   Bedzyk, M J ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON; SURFACTANT; TECHNETIUM;

ARTICLE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELASTICITY; PREDICTION; THEORETICAL MODEL; X RAY DIFFRACTION;

EID: 0037438037     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.035404     Document Type: Article

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