Segregation and diffusion of impurities from doped Si1-xGex films into silicon

Thin Solid Films

Volumn 369, Issue 1, 2000, Pages 222-225

  Kobayashi, S ^a   Aoki, T ^a   Mikoshiba, N ^a   Sakuraba, M ^b   Matsuura, T ^b   Murota, J ^b  

^a TOKYO POLYTECHNIC UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL IMPURITIES; EPITAXIAL GROWTH; PHOSPHORUS; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING BORON; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL DIFFUSION IN SOLIDS;

SILICON GERMANIDE;

SEMICONDUCTING FILMS;

EID: 0034226829     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)00811-7     Document Type: Article

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