Scanning tunneling microscopy images of Al0.2GA 0.8As-{1 1 0}: Influence of applied bias voltage and comparison between filled- and empty-states images

Surface Science

Volumn 556, Issue 1, 2004, Pages 39-51

  De Raad, G J ^a   Koenraad, P M ^a   Wolter, J H ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Gallium arsenide; Scanning tunneling microscopy; Semiconducting surfaces; Surface structure, morphology, roughness, and topography

Indexed keywords

ALUMINUM COMPOUNDS; BAND STRUCTURE; CARRIER CONCENTRATION; CONCENTRATION (PROCESS); ELECTRIC POTENTIAL; IMAGE ANALYSIS; PROBABILITY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE ROUGHNESS;

ROUGHNESS AND TOPOGRAPHY; SEMICONDUCTING SURFACES;

SURFACE STRUCTURE;

EID: 1842853869     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.01.065     Document Type: Article

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