Subnanometre depth resolution in sputter depth profiling of Si layers using grazing-incident low-energy O2+ and Ar+ ions

Surface and Interface Analysis

Volumn 36, Issue 3, 2004, Pages 259-263

  Lee, Hyung Ik ^a   Kim, Hyun Kyong ^a   Kim, Kyung Joong ^a   Moon, Dae Won ^a   Shon, Hyun Kyung ^b,c   Shin, Hye Chung ^b   Kang, Hee Jae ^b  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

MEIS; Si; SIMS; Sputter depth profile

Indexed keywords

ARGON; COMPUTER SIMULATION; CRYSTALLINE MATERIALS; ION BOMBARDMENT; MOLECULAR DYNAMICS; OXYGEN; SCATTERING; SECONDARY ION MASS SPECTROMETRY; SPECTROSCOPIC ANALYSIS; SPUTTERING;

MEDIUM-ENERGY ION SCATTERING SPECTROSCOPY (MEIS); SPUTTER DEPTH PROFILE;

SILICON;

EID: 1842664951     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1683     Document Type: Article

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