GaAs delta-doped layers in Si for evaluation of SIMS depth resolution

Surface and Interface Analysis

Volumn 29, Issue 6, 2000, Pages 362-368

  Moon, D W ^a   Won, J Y ^b   Kim, K J ^a   Kim, H J ^a   Kang, H J ^b   Petravic, M ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Chungbuk National University   (South Korea)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MULTILAYERS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SPUTTERING;

DEPTH PROFILE;

SEMICONDUCTING SILICON;

EID: 0033708134     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/1096-9918(200006)29:6<362::AID-SIA864>3.0.CO;2-A     Document Type: Article

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