In-depth concentration distribution of Ar in Si surface after low-energy Ar+ ion sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 190, Issue 1-4, 2002, Pages 598-601

  Oh, D W ^a   Oh, S K ^a   Kang, H J ^a   Lee, H I ^b   Moon, D W ^b  

^a Chungbuk National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

In depth concentration of Ar; Medium energy ion spectroscopy; Monte Carlo simulation

Indexed keywords

ARGON; COMPUTER SIMULATION; ION BEAMS; MONTE CARLO METHODS; POSITIVE IONS; SEMICONDUCTING SILICON; SPECTROSCOPIC ANALYSIS; SPUTTERING;

MEDIUM-ENERGY ION SPECTROSCOPY (MEIS);

NUCLEAR PHYSICS;

EID: 0036569384     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(01)01199-5     Document Type: Conference Paper

References (10)