The incident angle effect on radiation damage and sputtering for low energy Ar+ ion bombardment

Radiation Effects and Defects in Solids

Volumn 142, Issue 1-4, 1997, Pages 369-383

  Kang, H J ^a   Kim, J H ^a   Lee, J C ^b   Moon, D W ^c  

^a Chungbuk National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

Computer simulation; Incident angle effect; Si; Surface damage MEIS; Ta2O5

Indexed keywords

AMORPHIZATION; COMPUTER SIMULATION; MOLECULAR DYNAMICS; MONTE CARLO METHODS; RADIATION DAMAGE; SILICON; SPUTTERING; TANTALUM COMPOUNDS; THIN FILMS;

MEDIUM ENERGY ION SCATTERING SPECTROSCOPY (MEIS);

ION BOMBARDMENT;

EID: 0031345621     PISSN: 10420150     EISSN: None     Source Type: Journal    
DOI: 10.1080/10420159708211620     Document Type: Article

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