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Volumn 58, Issue 1-2, 1999, Pages 48-51

The C-type defect on Si(0 0 1) as a hydrogen-vacancy complex

Author keywords

Defect; Electronic structure; Hydrogen; Silicon; Surface

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; ELECTRONIC STRUCTURE; HYDROGEN; MATHEMATICAL MODELS; POINT DEFECTS;

EID: 0344641928     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00273-6     Document Type: Article
Times cited : (5)

References (24)
  • 11
    • 85166166099 scopus 로고    scopus 로고
    • personal communication.
    • T. Yokoyama, personal communication.
    • Yokoyama, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.