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Volumn 58, Issue 1-2, 1999, Pages 48-51
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The C-type defect on Si(0 0 1) as a hydrogen-vacancy complex
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Author keywords
Defect; Electronic structure; Hydrogen; Silicon; Surface
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Indexed keywords
CRYSTAL ATOMIC STRUCTURE;
CRYSTAL ORIENTATION;
ELECTRONIC STRUCTURE;
HYDROGEN;
MATHEMATICAL MODELS;
POINT DEFECTS;
HYDROGEN-VACANCY COMPLEX;
SILICON;
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EID: 0344641928
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(98)00273-6 Document Type: Article |
Times cited : (5)
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References (24)
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