Influence of the carrier density on the optical gain and refractive index change in InGaN laser structures

Physica Status Solidi (A) Applied Research

Volumn 200, Issue 1, 2003, Pages 135-138

  Rowe M ^a   Michler, P ^a   Gutowski, J ^a   Kummler V ^b   Lell, A ^b   Harle V ^b  

^a UNIVERSITY OF BREMEN   (Germany)

^b OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; GAIN MEASUREMENT; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; WAVEGUIDES;

KRAMERS-KRONEG RELATION; OPTICAL GAIN; TRANSPARENCY CARRIER DENSITY;

SEMICONDUCTOR LASERS;

EID: 18344400132     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200303263     Document Type: Article

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