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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 201-206

Optical gain in the nitrides: Are there differences to other III-V semiconductors?

(4) Hangleiter, A a Frankowsky, G a Harle V a Scholz, F a

a UNIVERSITY OF STUTTGART (Germany)

Author keywords

GaInN GaN heterostructure; GaN AlGaN heterostructure; Optical gain; Stripe excitation method

Indexed keywords

ANISOTROPY; EXCITONS; HETEROJUNCTIONS; NITRIDES; PHONONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY;

ALUMINUM GALLIUM NITRIDE; GALLIUM INDIUM NITRIDES; GALLIUM NITRIDE; OPTICAL GAIN SPECTRA; STRIPE EXCITATION METHOD;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030709652 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01861-2 Document Type: Article

Times cited : (8)

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