Doping of electrochemically etched pore arrays in n-type silicon: Processing and electrical characterization

Journal of the Electrochemical Society

Volumn 152, Issue 4, 2005, Pages

  Badel, X ^a   Domeij, M ^a   Linnros, J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTROCHEMISTRY; ETCHING; MICROMETERS; POSITIVE IONS; SEMICONDUCTOR JUNCTIONS; THERMAL DIFFUSION; TRANSISTORS;

ANISOTROPIC ALKALINE ETCHING; BORON DIFFUSION; PORE ARRAYS; SILICON SUBSTRATES;

SILICON;

EID: 18344377120     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1862263     Document Type: Article

References (20)

1. V. Lehmann, Electrochemistry of Silicon, Wiley-VCH Verlag GmbH, Weinheim, Germany (2002).
2. S. A. McAuley, H. Ashraf, L. Atabo, A. Chambers, S. Hall, I. Hopkins, and G. Nicholls, J. Phys. D, 34, 2769 (2001).
3. G. Pelfegrini, Ph-D. Thesis, University of Glasgow (2002).
4. V. Lehmaim, J. Electrochem. Soc., 140, 2836 (1993).
5. E. A. M. van den Meerakker, R. I. G. Elfrink, F. Roozeboom, and J. F. C. M. Verhoeven, J. Electrochem. Soc., 147, 2757 (2000).
6. V. Lehmmn and U. Grüning, Thin Solid Films, 297, 13 (1997).
7. V. Lehmann, W. Hönlein, H. Reisinger, A. Spitzer, H. Wendt, and J. Willer, Thin Solid Films, 276, 138 (1996).
8. F. Rozeboom, R. Elfrink, J. Verhoeven, J. van de Meerakker, and F. Holthuysen, Microelectron. Eng., 53, 581 (2000).
9. X. Badel, J. Linnros, P. Kleimann, B. Norlin, E. Koskiahde, K. Valpas, S. Nenonen, C. S. Petersson, and C. Fröjdh, IEEE Trans. Nucl. Sci. 51, 1001 (2004).
10. X. Badel, J. Linnros, M. S. Janson, and J. Österman, Nucl. Instrum. Methods Phys. Res. A, 509, 96 (2003).
11. P. Kleimann, J. Linnros, C. Frojdh, and C. S. Petersson, IEEE Trans. Nucl. Sci., 47, 1483 (2000).
12. S. I. Parker, C. J. Kenney, and J. Segal, Nucl. Instrum. Methods Phys. Res. A, 395, 328 (1997).
13. Y. Taur and T. H. Ning, Fundamentals of Modem VLSI Devices, Cambridge University Press, Cambridge (1998).
14. S. M. Sze, Semiconductor Devices - Physics and Technology, John Wiley & Sons, New York (1985).
15. T. R. Anthony, J. Appl. Phys., 53, 9154 (1982).
16. G. Pellegrini, P. Roy, R. Bates, D. Jones, K. Mathieson, I. Melone, V. O'Shea, K. M. Smith, I. Thayne, P. Thornton, I. Linnros, W. Rodden, and M. Rahman, Nucl. Instrum. Methods Phys. Res. A, 487, 19 (2002).
17. C. Kenney, S. Parker, J. Segal, and C. Storment, IEEE Trans. Nucl. Sci., 46, 1224 (1999).
18. P. Kleimann, J. Linnros, and C. S. Petersson, Mater. Sci. Eng., B, 69-70, 29 (2000).
19. S. M. Sze, VLSI Technology, McGraw-Hill Book Company, Singapore (1983).
20. M. Campbell, E. H. M. Heijne, G. Meddeler, E. Pernigotti, and W. Snoeys, IEEE Trans. Nucl. Sci., 45, 751 (1998).