Formation of pn junctions in deep silicon pores for X-ray imaging detector applications

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 509, Issue 1-3, 2003, Pages 96-101

  Badel, X ^a   Linnros, J ^a   Janson, M S ^a   Osterman J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

pn junction; SCM; SEM; Silicon macropores; SIMS; SSRM

Indexed keywords

PHOTONS; POROSITY; SEMICONDUCTOR JUNCTIONS; X RAYS;

X-RAY IMAGING DETECTORS;

RADIATION DETECTORS;

EID: 0042729982     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(03)01556-0     Document Type: Conference Paper

References (6)

1. Kleimann P., Linnros J., Fröjdh C., Petersson C.S. Nucl. Instr. and Meth. A. 460:2001;15.
2. Kleimann P., Linnros J., Fröjdh C., Petersson C.S. IEEE Trans. Nucl. Sci. 47:2000;1483.
3. Badel X., Galeckas A., Linnros J., Kleimann P., Fröjdh C., Petersson C.S. Nucl. Instr. and Meth. A. 487:2002;129.
4. Kleimann P., Linnros J., Petersson C.S. Mater. Sci. Eng. B. 69-70:2000;29.
5. Perovic D.D., Castell M.R., Howie A., Lavoie C., Tiedje T., Cole J.S.W. Ultramicroscopy. 58:1995;104.
6. M. Hjelm, B. Norlin, H.-E. Nilsson, C. Fröjdh, X. Badel, Monte Carlo simulation of imaging properties of scintillator-coated X-ray pixel detectors, Nucl. Instr. and Meth. A, (2003) these Proceedings.