Comparative study of trimethyl silane and tetramethylcyclotetrasiloxane- based low-k films

Journal of the Electrochemical Society

Volumn 152, Issue 4, 2005, Pages

  Widodo, J ^a,b   Goh, L N ^a   Lu, W ^a   Mhaisalkar, S G ^b   Zeng, K Y ^c   Hsia, L C ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DANGLING BONDS; FLOW RATES; LOW-K FILMS; TRIMETHYL SILANES;

CHEMICAL BONDS; ELASTIC MODULI; ELECTROCHEMISTRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; LOW TEMPERATURE EFFECTS; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POROSITY; SILICA; SILICONES; STRENGTH OF MATERIALS; THERMODYNAMIC STABILITY;

SILANES;

EID: 18344374510     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1861176     Document Type: Article

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