Band filling and energy relaxation in InGaN/GaN-multiple quantum well structures

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 301-305

  Riemann, T ^a   Rudloff, D ^a   Christen, J ^a   Krost, A ^a   Lunenburger M ^b   Protzmann, H ^b   Heuken, M ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033242910     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1521-3951(199911)216:1<301::aid-pssb301>3.3.co;2-a     Document Type: Article

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