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Volumn 8, Issue 4, 2005, Pages 476-482

Thermal-induced normal grain growth mechanism in LPCVD polysilicon film

Author keywords

Annealing; Atomic force microscopy; Polysilicon; Semiconductors

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEGREES OF FREEDOM (MECHANICS); ELECTRIC CONDUCTIVITY; GRAIN GROWTH; GRAIN SIZE AND SHAPE; HIGH TEMPERATURE EFFECTS; INTERFACIAL ENERGY; MICROELECTROMECHANICAL DEVICES; POLYCRYSTALLINE MATERIALS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

EID: 18244398930     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.10.003     Document Type: Article
Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.