-
1
-
-
0026188346
-
Piezoresistive pressure sensors based on polycrystalline silicon
-
V. Mosser, J. Suski, J. Goss, and E. Obermeier Piezoresistive pressure sensors based on polycrystalline silicon Sensors Actuators A 28 1991 113 132
-
(1991)
Sensors Actuators A
, vol.28
, pp. 113-132
-
-
Mosser, V.1
Suski, J.2
Goss, J.3
Obermeier, E.4
-
3
-
-
0036776537
-
Single-electron effects in highly doped polysilicon nanowires
-
A. Tilke, R.H. Blick, H. Lorenz, and J.P. Kotthaus Single-electron effects in highly doped polysilicon nanowires Physica E 15 2002 60 64
-
(2002)
Physica E
, vol.15
, pp. 60-64
-
-
Tilke, A.1
Blick, R.H.2
Lorenz, H.3
Kotthaus, J.P.4
-
6
-
-
0033190177
-
The effect of polysilicon grain boundaries on MOS based devices
-
W. Eccleston The effect of polysilicon grain boundaries on MOS based devices Microelectron Eng 48 1999 105 108
-
(1999)
Microelectron Eng
, vol.48
, pp. 105-108
-
-
Eccleston, W.1
-
7
-
-
0037123487
-
Characterization of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images
-
I. Ahmad, A. Omar, A. Hussain, and A. Mikdad Characterization of polysilicon gate microstructures for 0.5 μm CMOS devices using transmission electron microscopy and atomic force microscopy images Appl Surf Sci 191 2002 362 367
-
(2002)
Appl Surf Sci
, vol.191
, pp. 362-367
-
-
Ahmad, I.1
Omar, A.2
Hussain, A.3
Mikdad, A.4
-
8
-
-
0021393552
-
Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon
-
C.V. Thompson, and H.I. Smith Surface-energy-driven secondary grain growth in ultrathin (<100 nm) films of silicon Appl Phys Lett 44 1984 603
-
(1984)
Appl Phys Lett
, vol.44
, pp. 603
-
-
Thompson, C.V.1
Smith, H.I.2
-
9
-
-
36549101295
-
Secondary grain growth in thin films of semiconductors: Theoretical aspects
-
C.V. Thompson Secondary grain growth in thin films of semiconductors theoretical aspects J Appl Phys 58 1985 763
-
(1985)
J Appl Phys
, vol.58
, pp. 763
-
-
Thompson, C.V.1
-
10
-
-
0018011483
-
Grain growth mechanism of heavily phosphorus-implanted polycrystalline silicon
-
Wada. Yasuo, and Nishimatsu. Shigeru Grain growth mechanism of heavily phosphorus-implanted polycrystalline silicon J Electrochem Soc Solid-State Sci Techn 125 9 1978 1499 1504
-
(1978)
J Electrochem Soc: Solid-State Sci Techn
, vol.125
, Issue.9
, pp. 1499-1504
-
-
Wada, Y.1
Nishimatsu, S.2
-
11
-
-
0033891109
-
Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing
-
N. Matsuo, Y. Aya, T. Kanamori, T. Nouda, H. Hamada, and T. Miyoshi Study of crystal growth mechanism for poly-Si film prepared by excimer laser annealing Jpn J Appl Phys 39 2A 2000 351 356
-
(2000)
Jpn J Appl Phys
, vol.39
, Issue.2
, pp. 351-356
-
-
Matsuo, N.1
Aya, Y.2
Kanamori, T.3
Nouda, T.4
Hamada, H.5
Miyoshi, T.6
-
12
-
-
1842709289
-
Effect of hydrogen and thermal conductivity on nucleation of polycrystalline Si by excimer laser annealing
-
N. Kawamoto, N. Matsuo, H. Abe, F. Anwar, I. Hasegawa, K. Yamano, and H. Hamada Effect of hydrogen and thermal conductivity on nucleation of polycrystalline Si by excimer laser annealing Jpn J Appl Phys 43 1 2004 293 298
-
(2004)
Jpn J Appl Phys
, vol.43
, Issue.1
, pp. 293-298
-
-
Kawamoto, N.1
Matsuo, N.2
Abe, H.3
Anwar, F.4
Hasegawa, I.5
Yamano, K.6
Hamada, H.7
-
14
-
-
0000292141
-
A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors
-
A.W. Wang, and K.C. Saraswat A strategy for modeling of variations due to grain size in polycrystalline thin-film transistors IEEE Trans Electron Dev 47 5 2000 1035 1043
-
(2000)
IEEE Trans Electron Dev
, vol.47
, Issue.5
, pp. 1035-1043
-
-
Wang, A.W.1
Saraswat, K.C.2
-
15
-
-
0035337186
-
Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET
-
J. Singh, Wang. Hongmei, and Chan. Mansun Effects of longitudinal and latitudinal grain boundaries on the performance of large-grain polysilicon MOSFET IEEE Electron Dev Lett 22 5 2001 218 220
-
(2001)
IEEE Electron Dev Lett
, vol.22
, Issue.5
, pp. 218-220
-
-
Singh, J.1
Hongmei, Wang.2
Mansun, Chan.3
-
16
-
-
18244405476
-
-
http://www.industrialheating.com/CDA/ArticleInformation/features/ BNP__Features__Item/0,2832,27813,00.html.
-
-
-
-
17
-
-
18244403282
-
-
http://www.mrs.org/publications/jmr/jmra/2001/sep/020.html.
-
-
-
-
18
-
-
0025417074
-
Plastic deformation of highly doped silicon
-
F. Maseeh, and S.D. Senturia Plastic deformation of highly doped silicon Sensors Actuators A21 A23 1990 861 865
-
(1990)
Sensors Actuators
, vol.2123
, pp. 861-865
-
-
Maseeh, F.1
Senturia, S.D.2
-
19
-
-
18244390620
-
Thermal conductivity of heavily doped low-pressure chemical vapor deposited polycrystalline silicon films
-
Y.C. Tai, C.H. Mastrangelo, and R.S. Muller Thermal conductivity of heavily doped low-pressure chemical vapor deposited polycrystalline silicon films J Appl Phys 63 1988 950
-
(1988)
J Appl Phys
, vol.63
, pp. 950
-
-
Tai, Y.C.1
Mastrangelo, C.H.2
Muller, R.S.3
-
20
-
-
0030282664
-
Microtribological studies of doped single-crystal silicon and polysilicon films for MEMS devices
-
B. Bhushan, and V.N. Koinkar Microtribological studies of doped single-crystal silicon and polysilicon films for MEMS devices Sensors Actuators A57 1996 91 102
-
(1996)
Sensors Actuators
, vol.57
, pp. 91-102
-
-
Bhushan, B.1
Koinkar, V.N.2
-
21
-
-
18244368042
-
-
Akhtar J, et al. to be published
-
Akhtar J, et al. to be published.
-
-
-
|