Effect of polysilicon grain boundaries on MOS based devices

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 105-108

  Eccleston, W ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROSTATICS; GRAIN BOUNDARIES; MOSFET DEVICES; SEMICONDUCTING POLYMERS; SEMICONDUCTING SILICON; TEMPERATURE MEASUREMENT;

POLYSILICON;

MOS DEVICES;

EID: 0033190177     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00348-2     Document Type: Article

References (4)

1. J. Y. W. Seto, JAppl. Phys, 46, No. 12, (1975), 5247
2. H. Borkan and P. Weimer, R. C. A. Review, 24, (1964), 153
3. A. Many, Y. Goldstein and N. Grover Semiconductor Surfaces, North-Holland Publishing Co., Amsterdam.
4. R. A. Street, Hydrogenated Amorphous Silicon, Publ. Cambridge University Press.