Fabrication and characterization of 4H-SiC P-N junction diodes by selective-epitaxial growth using TaC as the mask

Journal of Electronic Materials

Volumn 34, Issue 4, 2005, Pages 450-456

  Li, C ^a   Losee, P ^a   Seiler, J ^a   Bhat, I ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC; Chemical vapor deposition; Junction diodes; Selective epitaxial growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; LEAKAGE CURRENTS; MASKS; OPTICAL MICROSCOPY; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; TANTALUM CARBIDE;

4H-SIC; CONDUCTION REGION; JUNCTION DIODES; SELECTIVE-EPITAXIAL GROWTH;

SEMICONDUCTOR DIODES;

EID: 18244396928     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-005-0126-1     Document Type: Conference Paper

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