Aluminum and boron diffusion into (11̄00) face SiC substrates

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 557-560

  Soloviev, S I ^a   Gao, Y ^a   Khlebnikov, Y ^b   Khlebnikov, I I ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

^b Bandgap Technologies Inc   (United States)

Author keywords

C face; Diffusion; Diffusion coefficient; SIMS

Indexed keywords

BORON; CONCENTRATION (PROCESS); DIFFUSION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; SILICON CARBIDE; ALUMINUM; ALUMINUM ALLOYS; SUBSTRATES;

C-FACE; CO-DIFFUSION; DEPTH PROFILES; BORON DIFFUSIONS; BORON-DOPING; CO DIFFUSION; CONCENTRATION-DEPTH PROFILE; ENHANCED DIFFUSION; IMPURITY PROFILE; SECONDARY ION MASS SPECTROSCOPIES (SIMS); SIC SUBSTRATES;

ALUMINUM; DIFFUSION;

EID: 4243789508     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.557     Document Type: Article

References (4)

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