Selective growth of 4H-SiC on 4H-SiC substrates using a high temperature mask

Materials Science Forum

Volumn 457-460, Issue I, 2004, Pages 185-188

  Li, C ^a   Seiler, J ^a   Bhat, I ^a   Chow, T P ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

CVD; Lateral epitaxial overgrowth; LEO; Selective growth; Silicon carbide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL GROWTH; MASKS; NUCLEATION; PHOTOLITHOGRAPHY; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY;

CROSS SECTION; ETCHED PATTERN; LATERAL EPITAXIAL OVERGROWTH; SELECTIVE GROWTH;

SILICON CARBIDE;

EID: 4644295861     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.185     Document Type: Conference Paper

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