Doping of 6H-SiC by selective diffusion of boron

Applied Physics Letters

Volumn 77, Issue 24, 2000, Pages 4004-4006

  Soloviev, S I ^a   Gao, Y ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000931251     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1329328     Document Type: Article

References (8)

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