Planar 4H- and 6H-SiC p-n diodes fabricated by selective diffusion of boron

Solid-State Electronics

Volumn 45, Issue 12, 2001, Pages 1987-1990

  Gao, Y ^a   Soloviev, S ^a   Sudarshan, T S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

Boron; p n diodes; Selective diffusion; SiC

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; GRAPHITE; HYDROGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SILICON CARBIDE; SOLID STATE RECTIFIERS;

RECTIFICATION;

SEMICONDUCTOR DIODES;

EID: 0035545724     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00254-4     Document Type: Article

References (8)

1. SiC power devices
2. Planar aluminum-implanted 1400 V 4H silicon carbide p-n diodes with low on resistance
3. P-N Junction creation in 6H-SiC by aluminum implantation
4. The Third European Conference on SiC and Related Materials
5. Doping of 6H-SiC by selective diffusion of boron
6. Boron diffusion into 6H-SiC through graphite mask
7. Performace limiting surface defects in SiC epitaxial p-n junction diodes
8. +N junctions fabricated by beryllium implantation